GROWTH-KINETICS OF SILICON THIN-FILM STUDIED BY HYDROGEN RADICAL AND ION IRRADIATION

被引：8

作者：

MIYAZAKI, S

INOUE, Y

KIRIKI, Y

HIROSE, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.2382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2382 / 2386

页数：5

共 8 条

[1]

HAMASAKI T, 1982, 7TH P INT C VAC MET, P432

[2]

HIROSE M, 1984, SEMICONDUCTORS SEMIM, V21, pCH2

ITABASHI, N ;

KATO, K ;

NISHIWAKI, N ;

GOTO, T ;

YAMADA, C ;

HIROTA, E .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1565-L1567

[4]

ITOH M, 1988, 35TH SPRING M JAP 2, P677

[5]

KAMPAS FJ, 1984, SEMICONDUCTORS SEM A, V21, pCH8

[6]

MIYAZAKI S, 1987, 172ND P M EL SOC HON, P186

[7] USE OF ELECTRIC PROBES IN SILANE RADIO-FREQUENCY DISCHARGES [J].

MOSBURG, ER ;

KERNS, RC ;

ABELSON, JR .

POTZINGER, P ;

LAMPE, FW .