STUDY ON THE BEHAVIOR OF SURFACE ADATOMS DURING PHOTOASSISTED MBE OF ZNSE AND IMPROVEMENT OF SURFACE-MORPHOLOGY

被引：7

作者：

MATSUMURA, N

SENGA, K

KAKUTA, J

FUKADA, T

SARAIE, J

机构：

[1] Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90753-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have found for the first time that the total photodesorption of adatoms from physical- and chemical-adsorption state reduces when a DC electric field is applied normal to the surface. Considering this result and other irradiation effects on MBE growth, a model of the behavior of surface adatoms is proposed. In this model the important role of both photogenerated electrons and holes is emphasized. Moreover, we have succeeded in improving the surface morphologies of light-irradiated epilayers using misoriented (100)GaAs substrates toward the [011BAR] direction. This improvement is explained taking into account the atomic steps on this surface.

引用

页码：279 / 283

页数：5

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