LOW-TEMPERATURE GROWTH OF ZNSE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY

被引：10

作者：

FUKADA, T

MATSUMURA, N

FUKUSHIMA, Y

SARAIE, J

机构：

[1] Department of Electronics and Information Science, Kyoto Institute of Technology, Kyoto, 606, Matsugasaki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 09期

关键词：

Crystalline quality improvement; Low-temperature growth; Photoassisted MBE; ZnSe;

D O I：

10.1143/JJAP.29.L1585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe epilayers have been successfully grown at a low temperature of 150°C for the first time by photoassisted molecular beam epitaxy. A He-Cd laser (441.6 nm) with an intensity of about 300 mW/cm2 was used as a light source. The free-exciton line in photoluminescence spectra at 11 K was sharp and strong, comparable with that of unirradiated epilayers grown at 340°C which is the optimum growth temperature without irradiation. © 1990 The Japan Society of Applied Physics.

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页码：L1585 / L1587

页数：3

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