HOLE CAPTURE AT THE DX(SI) AND DX(TE) DEFECTS IN ALXGA1-XAS

被引：17

作者：

DOBACZEWSKI, L ^{[1
]}

KACZOR, P ^{[1
]}

ZYTKIEWICZ, ZR ^{[1
]}

MISSOUS, M ^{[1
]}

SALEEMI, F ^{[1
]}

DAWSON, P ^{[1
]}

PEAKER, AR ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.351483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results of measurements of the hole recombination process at DX centers related to group-IV (silicon) and group-VI (tellurium) donor elements in AlxGa1-xAs are presented. For the DX(Si) and DX(Te) defects the values of hole capture cross section sigma(h) = 2 X 10(-13) and sigma(h) = 10(-13) cm2 were found, respectively. In both cases no systematic change of sigma(h) with temperature was observed. The results show that the DX center in the ground state is negatively charged as a consequence of its negative-U two-electron character.

引用

页码：3198 / 3200

页数：3

共 23 条

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].