共 16 条
- [1] TRAPPING CHARACTERISTICS OF TE-RELATED CENTERS IN GAAS1-XPX [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5295 - 5301
- [4] JANTSCH W, 1989, 15TH P INT C DEF SEM, P1131
- [5] KHACHATURYAN K, 1989, 15TH P INT C DEF SEM, P1067
- [8] EVIDENCE FOR LARGE LATTICE-RELAXATION AT THE DX CENTER IN SI-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1988, 37 (14): : 8298 - 8307
- [9] MOONEY PM, 1988, MATERIALS RES SOC S, V104, P561
- [10] Pantelides S. T., 1986, DEEP CTR SEMICONDUCT, P489