DIRECT EVIDENCE FOR 2-STEP PHOTOIONIZATION OF DX(TE) CENTERS IN ALXGA1-XAS

被引:53
作者
DOBACZEWSKI, L
KACZOR, P
机构
[1] Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw
关键词
D O I
10.1103/PhysRevLett.66.68
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A detailed analysis of the photoionization process of DX(Te) centers in AlxGa(l-x)As (0.25 < x < 0.55) for different and light intensities revealed, for the first time, that the process goes through two steps. The only possible interpretation of the phenomenon is by means of a negative-U character of the defect; i. e.; the center binds two electrons in the ground state, forming a DX- energy state. An intermediate state for the process is a one-electron localized state of the defect.
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页码:68 / 71
页数:4
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