PHOTOIONIZATION THRESHOLD OF THE DEEP DONOR IN SI-DOPED ALXGA1-XAS

被引：24

作者：

HENNING, JCM

ANSEMS, JPM

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.38.5772

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5772 / 5775

页数：4

共 17 条

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