DETERMINATION OF THE PHOTOIONIZATION THRESHOLD OF THE DEEP DONOR IN AL0.33GA0.67AS-SI - EVIDENCE FOR SMALL LATTICE-RELAXATION

被引：15

作者：

HENNING, JCM

ANSEMS, JPM

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 44卷 / 03期

关键词：

D O I：

10.1007/BF00616697

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：245 / 247

页数：3

共 16 条

[1] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE [J].

BALSLEV, I .

PHYSICAL REVIEW, 1968, 173 (03) :762-&

[2] NEW MODEL OF DEEP DONOR CENTRES IN AlxGa1 - xAs. [J].

Henning, J.C.M. ;

Ansems, J.P.M. .

Semiconductor Science and Technology, 1987, 2 (01) :1-13

[3]

HENNING JCM, 1986, 14TH P INT C DEF SEM, V10, P429

[4] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J].

HJALMARSON, HP ;

DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :656-658

[5] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[6] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

[7]

LANG DV, 1979, I PHYS C SER, V43, P433

[8] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

Lucovsky, G. .

SOLID STATE COMMUNICATIONS, 1965, 3 (09) :299-302

[9] OPTICAL-TRANSITIONS VIA DEEP O-DONOR IN GAP .1. PHONON INTERACTION IN LOW-TEMPERATURE SPECTRA [J].

MONEMAR, B ;

SAMUELSON, L .

PHYSICAL REVIEW B, 1978, 18 (02) :809-829

[10] THEORY OF THE DX CENTER IN ALXGA1-XAS AND GAAS CRYSTALS [J].

MORGAN, TN .

PHYSICAL REVIEW B, 1986, 34 (04) :2664-2669

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