THEORY OF THE DX CENTER IN ALXGA1-XAS AND GAAS CRYSTALS

被引：144

作者：

MORGAN, TN

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2664

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2664 / 2669

页数：6

共 27 条

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[2]

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[4]

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[8] A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS [J].

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[10] CHEMICAL TRENDS IN THE ACTIVATION-ENERGIES OF DX CENTERS [J].

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