SELF-ALIGNED GERMANIUM MOSFETS USING A NITRIDED NATIVE OXIDE GATE INSULATOR

被引：41

作者：

ROSENBERG, JJ

MARTIN, SC

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期

关键词：

D O I：

10.1109/55.20421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：639 / 640

页数：2

共 15 条

[1] GERMANIUM INSULATED-GATE FIELD-EFFECT TRANSISTOR (FET) [J].

CHANG, LL ;

YU, HN .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (03) :316-&

[2] THE OXIDATION OF GERMANIUM SURFACES AT PRESSURES MUCH GREATER THAN ONE ATMOSPHERE [J].

CRISMAN, EE ;

ERCIL, YM ;

LOFERSKI, JJ ;

STILES, PJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1845-1848

[3] CONDUCTANCE OF AMORPHOUS-GERMANIUM NITRIDE FILMS IN HIGH ELECTRIC-FIELDS [J].

GRITSENKO, VA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (01) :387-393

[4] GROWTH AND MATERIALS CHARACTERIZATION OF NATIVE GERMANIUM OXYNITRIDE THIN-FILMS ON GERMANIUM [J].

HYMES, DJ ;

ROSENBERG, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) :961-965

[5] PREPARATION OF GERMANIUM NITRIDE FILMS ON STAINED GERMANIUM CRYSTAL SURFACE [J].

IGARASHI, Y ;

KURUMADA, K ;

NIIMI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (03) :300-&

[6] DLTS MEASUREMENTS OF A GERMANIUM M-I-S INTERFACE [J].

JACK, MD ;

LEE, JYM ;

LEFEVRE, H .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :571-589

[7]

NAGAI H, 1974, REV ELEC COMMUN LAB, V22, P1043

[8] THE DRIFT MOBILITY OF ELECTRONS AND HOLES IN GERMANIUM AT LOW TEMPERATURES [J].

PAIGE, EGS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) :207-219

[9]

ROSENBERG J, 1983, 1983 P DEV RES C BUR

[10]

RZHANOV IV, 1979, THIN SOLID FILMS, V58, P37

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