ELECTRICAL-PROPERTIES AND THERMAL-STABILITY OF MBE-GROWN AL/ALXGA1-XAS/AL0.25GA0.75AS SCHOTTKY BARRIERS

被引：5

作者：

BOSACCHI, A ^{[1
]}

FRANCHI, S ^{[1
]}

GOMBIA, E ^{[1
]}

MOSCA, R ^{[1
]}

FANTINI, F ^{[1
]}

MENOZZI, R ^{[1
]}

NACCARELLA, S ^{[1
]}

机构：

[1] UNIV PARMA,DEPT INFORMAT ENGN,I-43100 PARMA,ITALY

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 10期

关键词：

SCHOTTKY-BARRIER DIODES; MOLECULAR BEAM EPITAXIAL GROWTH;

D O I：

10.1049/el:19940533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of the Al mole fraction of a thin (4nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435-degrees-C are studied.

引用

页码：820 / 822

页数：3

共 6 条

[1] THERMAL-STABILITY OF AL/ALGAAS AND AL/GAAS/ALGAAS(MBE) SCHOTTKY BARRIERS [J].