REDUCED REVERSE BIAS CURRENT IN AL-GAAS AND IN0.75GA0.25AS-GAAS JUNCTIONS CONTAINING AN INTERFACIAL ARSENIC LAYER

被引：10

作者：

ROSSI, DV ^{[1
]}

FOSSUM, ER ^{[1
]}

PETTIT, GD ^{[1
]}

KIRCHNER, PD ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：982 / 984

页数：3

共 7 条

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