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P-TYPE DOPING EFFECTS ON BAND-GAP ENERGY FOR GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
被引:57
作者
:
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, DIV COMPOUND SEMICOND DEVICE, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
SUZUKI, T
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, DIV COMPOUND SEMICOND DEVICE, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
GOMYO, A
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, DIV COMPOUND SEMICOND DEVICE, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
HINO, I
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, DIV COMPOUND SEMICOND DEVICE, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, DIV COMPOUND SEMICOND DEVICE, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
KAWATA, S
IIJIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP, DIV COMPOUND SEMICOND DEVICE, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
IIJIMA, S
机构
:
[1]
NEC CORP, DIV COMPOUND SEMICOND DEVICE, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
[2]
NEC CORP, FUNDAMENTAL RES LABS, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
|
1988年
/ 27卷
/ 08期
关键词
:
D O I
:
10.1143/JJAP.27.L1549
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L1549 / L1552
页数:4
相关论文
共 12 条
[1]
ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
BURSTEIN, E
论文数:
0
引用数:
0
h-index:
0
BURSTEIN, E
[J].
PHYSICAL REVIEW,
1954,
93
(03):
: 632
-
633
[2]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
: 631
-
643
[3]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
[J].
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
: 353
-
358
[4]
STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 367
-
373
[5]
EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(11)
: 673
-
675
[6]
OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
SUZUKI, T
IIJIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
IIJIMA, S
[J].
PHYSICAL REVIEW LETTERS,
1988,
60
(25)
: 2645
-
2648
[7]
HINO I, 1985, I PHYS C SER, V79, P151
[8]
LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[9]
DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES
LEE, JW
论文数:
0
引用数:
0
h-index:
0
LEE, JW
LAIDIG, WD
论文数:
0
引用数:
0
h-index:
0
LAIDIG, WD
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(01)
: 147
-
165
[10]
SUZUKI T, 1987, IECE OQE8745 TECH RE, P109
←
1
2
→
共 12 条
[1]
ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
BURSTEIN, E
论文数:
0
引用数:
0
h-index:
0
BURSTEIN, E
[J].
PHYSICAL REVIEW,
1954,
93
(03):
: 632
-
633
[2]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
: 631
-
643
[3]
RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
论文数:
0
引用数:
0
h-index:
0
CUSANO, DA
[J].
SOLID STATE COMMUNICATIONS,
1964,
2
(11)
: 353
-
358
[4]
STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 367
-
373
[5]
EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(11)
: 673
-
675
[6]
OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
SUZUKI, T
IIJIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
IIJIMA, S
[J].
PHYSICAL REVIEW LETTERS,
1988,
60
(25)
: 2645
-
2648
[7]
HINO I, 1985, I PHYS C SER, V79, P151
[8]
LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[9]
DIFFUSION AND INTERDIFFUSION IN ZN-DISORDERED ALAS-GAAS SUPER-LATTICES
LEE, JW
论文数:
0
引用数:
0
h-index:
0
LEE, JW
LAIDIG, WD
论文数:
0
引用数:
0
h-index:
0
LAIDIG, WD
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1984,
13
(01)
: 147
-
165
[10]
SUZUKI T, 1987, IECE OQE8745 TECH RE, P109
←
1
2
→