ON THE DEFECT STRUCTURE DUE TO LOW-ENERGY ION-BOMBARDMENT OF GRAPHITE

被引：77

作者：

MARTON, D ^{[1
]}

BU, H ^{[1
]}

BOYD, KJ ^{[1
]}

TODOROV, SS ^{[1
]}

ALBAYATI, AH ^{[1
]}

RABALAIS, JW ^{[1
]}

机构：

[1] UNIV HOUSTON,DEPT CHEM,HOUSTON,TX 77204

来源：

SURFACE SCIENCE | 1995年 / 326卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(95)00002-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphite surfaces cleaved perpendicular to the c axis have been irradiated with low doses of Ar+ ions at 50 eV kinetic energy and perpendicular incidence. Scanning tunneling micrographs (STM) of these irradiated surfaces exhibited dome-like features as well as point defects. These dome-like features retain undisturbed graphite periodicity. This finding is attributed to the stopping of ions between the first and second graphite sheets. The possibility of doping semiconductors at extremely shallow depths is raised.

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收藏

页码：L489 / L493

页数：5

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