DAMAGE INTRODUCTION IN INGAP BY ELECTRON-CYCLOTRON-RESONANCE AR PLASMAS

被引：18

作者：

LEE, JW ^{[1
]}

PEARTON, SJ ^{[1
]}

ABERNATHY, CR ^{[1
]}

HOBSON, WS ^{[1
]}

REN, F ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 21期

关键词：

D O I：

10.1063/1.114856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Changes in sheet resistance of n- and p-type InGaP exposed to electron cyclotron resonance Ar plasmas have been used to measure the introduction of ion-induced damage. p-type material is much more resistant to change in its conductivity than n-type InGaP, indicating that electron traps are the predominant entity produced by the ion bombardment. For short (similar to 1 min) plasma exposures the ion current is more important than ion energy in producing resistance changes. Annealing of damage in both conductivity types occurs with an activation energy of similar to 3.4+/-0.5 eV. (C) 1995 American Institute of Physics.

引用

页码：3129 / 3131

页数：3

共 10 条

[1]

HOBSON WS, 1993, P MAT RES SOC, V300, P75

[2] GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH AND DEVICE APPLICATIONS IN IN0.5GA0.5P AND IN0.5AL0.5P HETEROSTRUCTURES [J].