FABRICATION OF SELF-ALIGNED GAAS/ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS

被引:23
作者
REN, F
LOTHIAN, JR
PEARTON, SJ
ABERNATHY, CR
WISK, PW
FULLOWAN, TR
TSENG, B
CHU, SNG
CHEN, YK
YANG, LW
FU, ST
BROZOVICH, RS
LIN, HH
HENNING, CL
HENRY, T
机构
[1] MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221
[2] AT&T BELL LABS,READING,PA 19612
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 05期
关键词
D O I
10.1116/1.587537
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Self-aligned processing of high efficiency power heterojunction bipolar transistors (HBTs) using implant isolation, selective wet and dry etching for mesa formation, plasma-enhanced chemical vapor deposited SiNx for sidewall spacers and through-wafer via connections is reported. GaAs/AlGaAs and GaAs/InGaP HBTs grown by metalorganic molecular beam epitaxy utilizing carbon far high, well-confined base doping produced power-added efficiencies of 63%, power gain of 10 dB and output power of 1.7 W at 4 GHz for twelve 2 X 15 mu m(2) double-emitter finger devices (GaAs/ AlGaAs) and 57% power-added efficiency, power gain of 11.3 dB and output power of 0.6 W at 4 GHz (GaAs/InGaP), respectively.
引用
收藏
页码:2916 / 2928
页数:13
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