FABRICATION OF SELF-ALIGNED GAAS/ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：23

作者：

REN, F

LOTHIAN, JR

PEARTON, SJ

ABERNATHY, CR

WISK, PW

FULLOWAN, TR

TSENG, B

CHU, SNG

CHEN, YK

YANG, LW

FU, ST

BROZOVICH, RS

LIN, HH

HENNING, CL

HENRY, T

机构：

[1] MARTIN MARIETTA,ELECTR LAB,SYRACUSE,NY 13221

[2] AT&T BELL LABS,READING,PA 19612

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 05期

关键词：

D O I：

10.1116/1.587537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-aligned processing of high efficiency power heterojunction bipolar transistors (HBTs) using implant isolation, selective wet and dry etching for mesa formation, plasma-enhanced chemical vapor deposited SiNx for sidewall spacers and through-wafer via connections is reported. GaAs/AlGaAs and GaAs/InGaP HBTs grown by metalorganic molecular beam epitaxy utilizing carbon far high, well-confined base doping produced power-added efficiencies of 63%, power gain of 10 dB and output power of 1.7 W at 4 GHz for twelve 2 X 15 mu m(2) double-emitter finger devices (GaAs/ AlGaAs) and 57% power-added efficiency, power gain of 11.3 dB and output power of 0.6 W at 4 GHz (GaAs/InGaP), respectively.

引用

页码：2916 / 2928

页数：13

共 62 条

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