REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS AND AIGAAS USING C2H6/H2/AR OR CCL2F2/O2 GAS-MIXTURES

被引：57

作者：

PEARTON, SJ

CHAKRABARTI, UK

HOBSON, WS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.344296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2061 / 2064

页数：4

共 25 条

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