DRY ETCHING INDUCED DAMAGE ON VERTICAL SIDEWALLS OF GAAS CHANNELS

[1] EXPERIMENTAL-DETERMINATION OF THE EDGE DEPLETION WIDTH OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS/ALXGA1-XAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 110 - 112

[2] MONOLITHIC TWO-DIMENSIONAL SURFACE-EMITTING ARRAYS OF GAAS/ALGAAS DIODE-LASERS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (15) : 1138 - 1140

[3] DOUGHTY GF, 1987, P 6 INT C ION PLASM, P284

[4] ION-BEAM ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 28 - 35

[5] NANOMETER-SCALE COLUMNS IN GAAS FABRICATED BY ANGLED CHLORINE ION-BEAM-ASSISTED ETCHING [J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1726 - 1728

[6] GOODHUE WD, 1987, P C GAAS RELATED COM, P349

[7] OPTICAL SPECTROSCOPY OF ULTRASMALL STRUCTURES ETCHED FROM QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1043 - 1045

[8] RAMAN-SCATTERING STUDY OF PLASMA-ETCHING DAMAGE IN GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1316 - 1318

[9] DOT LITHOGRAPHY FOR ZERO-DIMENSIONAL QUANTUM-WELLS USING FOCUSED ION-BEAMS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (22) : 1589 - 1591

[10] SURFACE DAMAGE OF REACTIVE ION-BEAM ETCHED GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L510 - L512

[1] EXPERIMENTAL-DETERMINATION OF THE EDGE DEPLETION WIDTH OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS/ALXGA1-XAS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 110 - 112

[2] MONOLITHIC TWO-DIMENSIONAL SURFACE-EMITTING ARRAYS OF GAAS/ALGAAS DIODE-LASERS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (15) : 1138 - 1140

[3] DOUGHTY GF, 1987, P 6 INT C ION PLASM, P284

[4] ION-BEAM ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 28 - 35

[5] NANOMETER-SCALE COLUMNS IN GAAS FABRICATED BY ANGLED CHLORINE ION-BEAM-ASSISTED ETCHING [J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1726 - 1728

[6] GOODHUE WD, 1987, P C GAAS RELATED COM, P349

[7] OPTICAL SPECTROSCOPY OF ULTRASMALL STRUCTURES ETCHED FROM QUANTUM-WELLS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1043 - 1045

[8] RAMAN-SCATTERING STUDY OF PLASMA-ETCHING DAMAGE IN GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1316 - 1318

[9] DOT LITHOGRAPHY FOR ZERO-DIMENSIONAL QUANTUM-WELLS USING FOCUSED ION-BEAMS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (22) : 1589 - 1591

[10] SURFACE DAMAGE OF REACTIVE ION-BEAM ETCHED GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L510 - L512