NANOMETER-SCALE COLUMNS IN GAAS FABRICATED BY ANGLED CHLORINE ION-BEAM-ASSISTED ETCHING

被引：9

作者：

GOODHUE, WD

PANG, SW

JOHNSON, GD

ASTOLFI, DK

EHRLICH, DJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 21期

关键词：

D O I：

10.1063/1.98557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1726 / 1728

页数：3

共 7 条

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[3]

GOODHUE WD, 1987, I PHYS C SER, V83, P349

[4] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY [J].

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WOODALL, JM ;

WARREN, AC ;

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CHAPPELL, TI ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :475-477

[5] THE CONTRAST OF ION-BEAM STENCIL MASKS [J].

RANDALL, JN ;

STERN, LA ;

DONNELLY, JP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :201-204

[6] MASKED ION-BEAM RESIST EXPOSURE USING GRID SUPPORT STENCIL MASKS [J].

RANDALL, JN ;

FLANDERS, DC ;

ECONOMOU, NP ;

DONNELLY, JP ;

BROMLEY, EI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :58-61

[7] FABRICATION OF SMALL LATERALLY PATTERNED MULTIPLE QUANTUM-WELLS [J].

SCHERER, A ;

CRAIGHEAD, HG .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1284-1286

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