共 10 条
- [1] Andersen H. H., 1977, HYDROGEN STOPPING PO
- [2] MASKED ION-BEAM LITHOGRAPHY - A FEASIBILITY DEMONSTRATION FOR SUBMICROMETER DEVICE FABRICATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1166 - 1171
- [3] RANGES AND RANGE THEORIES [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 57 - 71
- [4] ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1259 - 1263
- [5] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1043 - 1046
- [6] SUB-100-NM-WIDE, DEEP TRENCHES DEFINED BY REACTIVE ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 341 - 344
- [8] SILICON-NITRIDE STENCIL MASKS FOR HIGH-RESOLUTION ION LITHOGRAPHY PROXIMITY PRINTING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1152 - 1155
- [9] LINEWIDTH CONTROL WITH MASKED ION-BEAM LITHOGRAPHY USING STENCIL MASKS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 10 - 14
- [10] MASKED ION-BEAM RESIST EXPOSURE USING GRID SUPPORT STENCIL MASKS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 58 - 61