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LINEWIDTH CONTROL WITH MASKED ION-BEAM LITHOGRAPHY USING STENCIL MASKS

被引：4
作者：
RANDALL, JN
BROMLEY, EI
ECONOMOU, NP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期
关键词：
D O I：
10.1116/1.583358
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：10 / 14
页数：5
相关论文
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  • [8] MASKED ION-BEAM RESIST EXPOSURE USING GRID SUPPORT STENCIL MASKS
    RANDALL, JN
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