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MASKED ION-BEAM RESIST EXPOSURE USING GRID SUPPORT STENCIL MASKS

被引：27
作者：
RANDALL, JN
FLANDERS, DC
ECONOMOU, NP
DONNELLY, JP
BROMLEY, EI
机构：
[1] MIT, Lincoln Lab, Lexington, MA, USA, MIT, Lincoln Lab, Lexington, MA, USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期
关键词：
GRID SUPPORT STENCIL MASKS - ION BEAM LITHOGRAPHY - MASKED ION BEAM RESIST EXPOSURE - SUBMICRON LITHOGRAPHY;
D O I：
10.1116/1.583291
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：58 / 61
页数：4
相关论文
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    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1080 - 1083
  • [2] MASKED ION-BEAM LITHOGRAPHY - A FEASIBILITY DEMONSTRATION FOR SUBMICROMETER DEVICE FABRICATION
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    FLANDERS, DC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1615 - 1619
  • [4] SILICON-NITRIDE STENCIL MASKS FOR HIGH-RESOLUTION ION LITHOGRAPHY PROXIMITY PRINTING
    RANDALL, JN
    FLANDERS, DC
    ECONOMOU, NP
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    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1152 - 1155
  • [5] ION-BEAM LITHOGRAPHY FOR IC-FABRICATION WITH SUBMICROMETER FEATURES
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    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1897 - 1900
  • [6] SEKIMOTO M, 1981, JPN J APPL PHYS, V20, P669
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