SUBMICROMETER-GATE GAAS-FET FABRICATION USING MASKED ION-BEAM OPTICAL HYBRID LITHOGRAPHY

被引：6

作者：

ADESIDA, I ^{[1
]}

ZHANG, M ^{[1
]}

SADLER, R ^{[1
]}

TIBERIO, R ^{[1
]}

WOLF, ED ^{[1
]}

机构：

[1] CORNELL UNIV, SCH ELECT ENGN, ITHACA, NY 14853 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1080 / 1083

页数：4

共 11 条

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[4] MASKED ION-BEAM LITHOGRAPHY - A FEASIBILITY DEMONSTRATION FOR SUBMICROMETER DEVICE FABRICATION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1166 - 1171
[5] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT
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[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &
[6] LEE C, 1982, IEEE T ELECTRON DEV, V29, P1522
[7] DEEP-LEVEL DEFECTS AND DIFFUSION LENGTH MEASUREMENTS IN LOW-ENERGY PROTON-IRRADIATED GAAS
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 335 - 354
[8] PROSPECTS FOR ION-BOMBARDMENT AND ION-IMPLANTATION IN GAAS AND INP DEVICE FABRICATION
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EZIS, A
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (04): : 109 - 130
[9] AN ELECTRON-BEAM-OPTICAL-HYBRID LITHOGRAPHY APPROACH TO SUBMICROMETER ELECTRONIC DEVICES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 924 - 926
[10] ION-BEAM LITHOGRAPHY FOR IC-FABRICATION WITH SUBMICROMETER FEATURES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1897 - 1900

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