BREAKDOWN STABILITY OF GOLD, ALUMINUM, AND TUNGSTEN SCHOTTKY BARRIERS ON GALLIUM-ARSENIDE

被引：8

作者：

BALIGA, BJ

EHLE, R

SEARS, A

CAMPBELL, P

GARWACKI, W

KATZ, W

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 07期

关键词：

D O I：

10.1109/EDL.1982.25528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：177 / 179

页数：3

相关论文

共 8 条

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