ORIENTATION DEPENDENCE OF BREAKDOWN VOLTAGE IN GAAS

被引:25
作者
LEE, MH [1 ]
SZE, SM [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0038-1101(80)90072-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1007 / 1009
页数:3
相关论文
共 5 条
[1]   TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].
CROWELL, CR ;
SZE, SM .
APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&
[2]  
LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434
[3]   BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS [J].
PEARSALL, T ;
CAPASSO, F ;
NAHORY, RE ;
POLLACK, MA ;
CHELIKOWSKY, JR .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :297-302
[4]   UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS [J].
STILLMAN, GE ;
WOLFE, CM ;
ROSSI, JA ;
FOYT, AG .
APPLIED PHYSICS LETTERS, 1974, 24 (10) :471-474
[5]   AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J].
SZE, SM ;
GIBBONS, G .
APPLIED PHYSICS LETTERS, 1966, 8 (05) :111-&