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ORIENTATION DEPENDENCE OF BREAKDOWN VOLTAGE IN GAAS
被引:25
作者
:
LEE, MH
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LEE, MH
[
1
]
SZE, SM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SZE, SM
[
1
]
机构
:
[1]
BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
:
SOLID-STATE ELECTRONICS
|
1980年
/ 23卷
/ 09期
关键词
:
D O I
:
10.1016/0038-1101(80)90072-6
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1007 / 1009
页数:3
相关论文
共 5 条
[1]
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
[J].
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
APPLIED PHYSICS LETTERS,
1966,
9
(06)
:242
-&
[2]
LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434
[3]
BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS
[J].
PEARSALL, T
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
PEARSALL, T
;
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CAPASSO, F
;
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
NAHORY, RE
;
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
POLLACK, MA
;
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CHELIKOWSKY, JR
.
SOLID-STATE ELECTRONICS,
1978,
21
(01)
:297
-302
[4]
UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS
[J].
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
STILLMAN, GE
;
WOLFE, CM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
WOLFE, CM
;
ROSSI, JA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
ROSSI, JA
;
FOYT, AG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
FOYT, AG
.
APPLIED PHYSICS LETTERS,
1974,
24
(10)
:471
-474
[5]
AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T)
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
GIBBONS, G
论文数:
0
引用数:
0
h-index:
0
GIBBONS, G
.
APPLIED PHYSICS LETTERS,
1966,
8
(05)
:111
-&
←
1
→
共 5 条
[1]
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
[J].
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
;
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
.
APPLIED PHYSICS LETTERS,
1966,
9
(06)
:242
-&
[2]
LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434
[3]
BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS
[J].
PEARSALL, T
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
PEARSALL, T
;
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CAPASSO, F
;
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
NAHORY, RE
;
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
POLLACK, MA
;
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CHELIKOWSKY, JR
.
SOLID-STATE ELECTRONICS,
1978,
21
(01)
:297
-302
[4]
UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS
[J].
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
STILLMAN, GE
;
WOLFE, CM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
WOLFE, CM
;
ROSSI, JA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
ROSSI, JA
;
FOYT, AG
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
FOYT, AG
.
APPLIED PHYSICS LETTERS,
1974,
24
(10)
:471
-474
[5]
AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T)
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
GIBBONS, G
论文数:
0
引用数:
0
h-index:
0
GIBBONS, G
.
APPLIED PHYSICS LETTERS,
1966,
8
(05)
:111
-&
←
1
→