DEEP-LEVEL DEFECTS AND DIFFUSION LENGTH MEASUREMENTS IN LOW-ENERGY PROTON-IRRADIATED GAAS

被引：11

作者：

LI, SS ^{[1
]}

WANG, WL ^{[1
]}

LAI, PW ^{[1
]}

OWEN, RT ^{[1
]}

LOO, RY ^{[1
]}

KAMATH, SG ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 02期

关键词：

D O I：

10.1007/BF02670853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：335 / 354

页数：20

共 21 条

[1] NON-EXTRINSIC CONDUCTION IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

ASHBY, A ;

ROBERTS, GG ;

ASHEN, DJ ;

MULLIN, JB .

SOLID STATE COMMUNICATIONS, 1976, 20 (01) :61-63

[2] RADIATION EFFECTS IN GAAS [J].

AUKERMAN, LW ;

GRAFT, RD ;

DAVIS, PW ;

SHILLIDAY, TS .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) :3590-+

[3] EFFECTS OF RADIATION-INDUCED DISPLACEMENT DAMAGE ON IMPURITY CONDUCTION IN GALLIUM-ARSENIDE [J].

BERG, NJ ;

LIEBERMAN, AG .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3475-3482

[4] VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1971, 19 (05) :143-&

[5]

CHENG LJ, 1974, P IEEE, V62, P1208

[6]

HARADE H, 1977, J APPL PHYS, V40, P73

[7] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[8]

Hovel H.J., 1975, SEMICONDUCTORS SEMIM, P8

[9] ANALYSES OF TRANSIENT CAPACITANCE EXPERIMENTS FOR AU-GAAS SCHOTTKY-BARRIER DIODES IN PRESENCE OF DEEP IMPURITIES AND INTERFACIAL LAYER [J].

HUANG, CI ;

LI, SS .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1481-1486

[10]

IKAWA Y, 1977, JAP J APPL PHYS, V17, P315

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