REACTIVE ION ETCHING DAMAGE TO GAAS-LAYERS WITH ETCH STOPS

被引:56
作者
KNOEDLER, CM
OSTERLING, L
SHTRIKMAN, H
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 05期
关键词
D O I
10.1116/1.584217
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1573 / 1576
页数:4
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