REACTIVE ION-ETCHING-INDUCED DAMAGE IN SILICON USING SF6 GAS-MIXTURES

[1] THERMAL ANNEALING AND ELECTRICAL ACTIVATION OF HIGH-DOSE GALLIUM IMPLANTED SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (05) : 845 - 862

[2] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3 [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 687 - 689

[3] CHU WK, 1979, PHYS REV B, V16, P3851

[4] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[5] PARAMETER DEPENDENCE OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2415 - 2419

[6] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[7] SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2237 - 2241

[8] DONOR GENERATION IN MONOCRYSTALLINE SILICON BY HALOGEN IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 241 - 246

[9] DRY ETCHING FOR PATTERN TRANSFER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1177 - 1183

[10] MATHEWS MD, 1971, RADIAT EFF, V11, P167

[1] THERMAL ANNEALING AND ELECTRICAL ACTIVATION OF HIGH-DOSE GALLIUM IMPLANTED SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (05) : 845 - 862

[2] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3 [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 687 - 689

[3] CHU WK, 1979, PHYS REV B, V16, P3851

[4] SF6, A PREFERABLE ETCHANT FOR PLASMA-ETCHING SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 123 - 126

[5] PARAMETER DEPENDENCE OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2415 - 2419

[6] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[7] SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2237 - 2241

[8] DONOR GENERATION IN MONOCRYSTALLINE SILICON BY HALOGEN IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 241 - 246

[9] DRY ETCHING FOR PATTERN TRANSFER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1177 - 1183

[10] MATHEWS MD, 1971, RADIAT EFF, V11, P167