A MONOLITHICALLY INTEGRATED INGAAS/INP PHOTORECEIVER OPERATING WITH A SINGLE 5-V POWER-SUPPLY

被引：18

作者：

MATSUDA, K

KUBO, M

OHNAKA, K

SHIBATA, J

机构：

[1] Matsushita Electric Industries Co, Ltd, Moriguchi, Jpn

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

INTEGRATED CIRCUITS; MONOLITHIC - OPTICAL COMMUNICATION EQUIPMENT;

D O I：

10.1109/16.2549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic photoreceiver consisting of an InGaAs p-i-n photodiode and a transimpedance preamplifier in which four junction field-effect transistors, four level shift diodes, and a feedback resistor are integrated is described. This photoreceiver has been designed to operate with a single 5-V power supply for the purpose of simplifying the whole transmission system. Easily producible device structures were adopted to increase the yield of the photoreceivers. A circuit transimpedance of 965 Ω and a 3-dB frequency of 240 MHz have been obtained for 5-V operation. Transmission of a 400-Mb/s NRZ signal has been achieved.

引用

页码：1284 / 1288

页数：5

共 7 条

[1] A MONOLITHIC SILICON PHOTODETECTOR AMPLIFIER IC FOR FIBER AND INTEGRATED-OPTICS APPLICATION [J].