INCORPORATION OF -OH RADICALS IN ANODIC SILICON-OXIDE FILMS STUDIED BY SECONDARY-ION MASS-SPECTROSCOPY, X-RAY PHOTOELECTRON-SPECTROSCOPY AND IR ANALYSIS

p-type silicon has been anodized in ethyleneglycol and KNO3-based electrolytes, containing different amounts of water. It has been shown that the presence of water in the electrolyte gives rise to different formation kinetics of the oxide. These oxide films are porous, thicker and with a larger incorporation of -OH radicals, as detected by secondary-ion mass spectroscopy and IR. X-ray photoelectron spectroscopy analysis shows larger chemical shifts, of about 5eV, for the Si 2p peak, together with a low oxygen content.