ANODIC-OXIDATION OF HYDROGENATED AMORPHOUS-SILICON AND PROPERTIES OF OXIDE

被引：29

作者：

HASEGAWA, H

ARIMOTO, S

NANJO, J

YAMAMOTO, H

OHNO, H

机构：

[1] Hokkaido Univ, Sapporo, Jpn, Hokkaido Univ, Sapporo, Jpn

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 02期

关键词：

D O I：

10.1149/1.2095631

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：424 / 431

页数：8

共 28 条

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OHNO, H ;

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[2] ANODIC-OXIDATION FOR ENHANCEMENT OF FABRICATION YIELD AND EFFICIENCY OF AMORPHOUS-SILICON SOLAR-CELLS [J].

ARIMOTO, S ;

HASEGAWA, H ;

YAMAMOTO, H ;

OHNO, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (02) :431-436

[3]

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[4]

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ALLEN, FG .

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[6] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].

HASEGAWA, H ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723

[7] BEHAVIORS OF CELL VOLTAGE DURING ANODIC-OXIDATION OF GAAS UNDER DARK AND ILLUMINATED CONDITIONS [J].

HASEGAWA, H ;

SUZUKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (12) :2489-2490

[8]

HASEGAWA H, 1985, 18TH IEEE PHOT SPEC, P933

[9] AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

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MATSUMURA, M .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :754-755

[10]

HO VQ, 1979, JPN J APPL PHYS, V19, P103

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