BEHAVIORS OF CELL VOLTAGE DURING ANODIC-OXIDATION OF GAAS UNDER DARK AND ILLUMINATED CONDITIONS

被引：8

作者：

HASEGAWA, H ^{[1
]}

SUZUKI, T ^{[1
]}

机构：

[1] HOKKAIDO UNIV, FAC ENGN, DEPT ELECT ENGN, SAPPORO, HOKKAIDO 060, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 12期

关键词：

D O I：

10.1143/JJAP.15.2489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2489 / 2490

页数：2

共 8 条

[1] PASSIVITY OF GALLIUM ARSENIDE [J].

HARVEY, WW ;

KRUGER, J .

ELECTROCHIMICA ACTA, 1971, 16 (11) :2017-&

[2] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723

[3] IMPROVED METHOD OF ANODIC-OXIDATION OF GAAS [J].

HASEGAWA, H ;

FORWARD, KE ;

HARTNAGEL, HL .

ELECTRONICS LETTERS, 1975, 11 (03) :53-54

[4] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION [J].

LOGAN, RA ;

SCHWARTZ, B ;

SUNDBURG, WJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1385-1390

[5] SIGNAL AND NOISE RESPONSE OF HIGH SPEED GERMANIUM AVALANCHE PHOTODIODES [J].

MELCHIOR, H ;

LYNCH, WT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :829-+

[6] ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES [J].

MULLER, H ;

EISEN, FH ;

MAYER, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :651-655

[7]

Sze S. M., 1969, PHYSICS SEMICONDUCTO, P675

[8] ANODIC DISSOLUTION OF N-TYPE GALLIUM-ARSENIDE UNDER ILLUMINATION [J].

YAMAMOTO, A ;

YANO, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (02) :260-267

← 1 →