INGAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH LANGMUIR-BLODGETT DEPOSITED GATE STRUCTURE

被引：7

作者：

CHAN, WK

CHANG, GK

BHAT, R

SCHLOTTER, NE

机构：

来源：

关键词：

D O I：

10.1109/55.696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：220 / 222

页数：3

共 12 条

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