INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH MERCURY AND CADMIUM GATES

被引：7

作者：

MEINERS, LG ^{[1
]}

CLAWSON, AR ^{[1
]}

NGUYEN, R ^{[1
]}

机构：

[1] USN,CTR OCEAN SYST,DIV ELECTR MAT SCI,SAN DIEGO,CA 92152

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 06期

关键词：

D O I：

10.1063/1.97161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：340 / 341

页数：2

共 10 条

[1] INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

BARRERA, JS ;

ARCHER, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1023-1030

[2] AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION [J].

CLARK, DT ;

FOK, T ;

ROBERTS, GG ;

SYKES, RW .

THIN SOLID FILMS, 1980, 70 (02) :261-283

[3] LOW-PRESSURE MOVPE OF INP FROM TRIMETHYLINDIUM AND PHOSPHINE [J].

CLAWSON, AR ;

ELDER, DI .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :111-116

[4] INP METAL-INSULATED-SEMICONDUCTOR SCHOTTKY CONTACTS USING SURFACE OXIDE LAYERS PREPARED WITH BROMINE WATER [J].

KAMIMURA, K ;

SUZUKI, T ;

KUNIOKA, A .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4905-4907

[5]

MORKOC H, 1979, I PHYS C SER, V45, P295

[6] ELECTRICAL STUDY OF SCHOTTKY-BARRIER HEIGHTS ON ATOMICALLY CLEAN AND AIR-EXPOSED N-INP (110) SURFACES [J].

NEWMAN, N ;

KENDELEWICZ, T ;

BOWMAN, L ;

SPICER, WE .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1176-1178

[7] THE ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF TUNNEL METAL-OXIDE-SEMICONDUCTOR DEVICES BUILT ON N-INP SUBSTRATES [J].

PANDE, KP ;

SHEN, CC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :749-753

[8] NON-INVASIVE ANALYSIS OF INP SURFACES USING HG-INP SCHOTTKY-BARRIER DIODES [J].

PRESSMAN, LD ;

FORREST, SR ;

BONNER, WA ;

VANUITERT, LG .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :969-971

[9] SCHOTTKY-BARRIER HEIGHTS OF HG, CD, AND ZN ON NORMAL-TYPE INP(100) [J].

SA, CJ ;

MEINERS, LG .

APPLIED PHYSICS LETTERS, 1986, 48 (26) :1796-1798

[10] LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP [J].

WADA, O ;

MAJERFELD, A .

ELECTRONICS LETTERS, 1978, 14 (05) :125-126

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