ELECTRICAL STUDY OF SCHOTTKY-BARRIER HEIGHTS ON ATOMICALLY CLEAN AND AIR-EXPOSED N-INP (110) SURFACES

被引：84

作者：

NEWMAN, N

KENDELEWICZ, T

BOWMAN, L

SPICER, WE

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 12期

关键词：

D O I：

10.1063/1.95749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1176 / 1178

页数：3

共 20 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES [J].

BRILLSON, LJ ;

BRUCKER, CF ;

KATNANI, AD ;

STOFFEL, NG ;

DANIELS, R ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :564-569

[3] SURFACE-DEFECTS AND FERMI-LEVEL PINNING IN INP [J].

DOW, JD ;

ALLEN, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :659-661

[4] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].

FREEOUF, JL ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729

[5]

HOKELEK E, 1982, APPL PHYS LETT, V40, P427

[6] SYSTEMATICS OF INTERFACIAL CHEMICAL-REACTIONS ON INP(110) [J].

KENDELEWICZ, T ;

PETRO, WG ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :453-458

[7]

KOROTCHENKOV GS, 1978, SOV PHYS SEMICOND+, V12, P141

[8]

LIST RS, J VAC SCI TECHNOL

[9]

NEWMAN N, SOLID STATE ELECTRON

[10]

Rhoderick E H, 1980, METAL SEMICONDUCTOR

← 1 2 →