SYSTEMATICS OF INTERFACIAL CHEMICAL-REACTIONS ON INP(110)

被引：42

作者：

KENDELEWICZ, T

PETRO, WG

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：453 / 458

页数：6

共 43 条

[1] PHOTOEMISSION-STUDIES OF THE AU-INP(110) INTERFACE
BABALOLA, IA
PETRO, WG
KENDELEWICZ, T
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 762 - 765
[2] BABALOLA IA, 1984, PHYS REV B, V1, P6614
[3] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION
BRILLSON, LJ
BRUCKER, CF
KATNANI, AD
STOFFEL, NG
MARGARITONDO, G
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 784 - 786
[4] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR
BRILLSON, LJ
BRUCKER, CF
KATNANI, AD
STOFFEL, NG
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666
[5] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
[6] FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
KATNANI, AD
STOFFEL, NG
DANIELS, R
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 564 - 569
[7] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
BRILLSON, LJ
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263
[8] ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES
DAW, MS
SMITH, DL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1028 - 1031
[9] MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS
DONIACH, S
SUNJIC, M
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02): : 285 - &
[10] SURFACE-DEFECTS AND FERMI-LEVEL PINNING IN INP
DOW, JD
ALLEN, RE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 659 - 661

← 1 2 3 4 5 →