SYSTEMATICS OF INTERFACIAL CHEMICAL-REACTIONS ON INP(110)

被引：42

作者：

KENDELEWICZ, T

PETRO, WG

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：453 / 458

页数：6

共 43 条

[31] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE
ROTH, JA
CROWELL, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1317 - 1324
[32] CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE
RUBLOFF, GW
HO, PS
FREEOUF, JF
LEWIS, JE
[J]. PHYSICAL REVIEW B, 1981, 23 (08) : 4183 - 4196
[33] SALVAN F, 1980, J PHYS LETT-PARIS, V41, pL337, DOI 10.1051/jphyslet:019800041014033700
[34] UNIFIED DEFECT MODEL AND BEYOND
SPICER, WE
LINDAU, I
SKEATH, P
SU, CY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027
[35] DEVELOPMENT AND CONFIRMATION OF THE UNIFIED MODEL FOR SCHOTTKY-BARRIER FORMATION AND MOS INTERFACE STATES ON III-V COMPOUNDS
SPICER, WE
EGLASH, S
LINDAU, I
SU, CY
SKEATH, PR
[J]. THIN SOLID FILMS, 1982, 89 (04) : 447 - 460
[36] SURFACE FERMI LEVEL OF III-V COMPOUND SEMICONDUCTOR-DIELECTRIC INTERFACES
WIEDER, HH
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 390 - 405
[37] WILLIAMS MD, 1984, APPL PHYS LETT, V44, P113
[38] SURFACE-DEFECTS ON SEMICONDUCTORS
WILLIAMS, RH
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 122 - 142
[39] CHEMICAL EFFECTS IN SCHOTTKY-BARRIER FORMATION
WILLIAMS, RH
MONTGOMERY, V
VARMA, RR
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (17): : L735 - L738
[40] METAL CONTACTS TO SILICON AND INDIUM-PHOSPHIDE CLEAVED SURFACES AND THE INFLUENCE OF INTERMEDIATE ADSORBED LAYERS
WILLIAMS, RH
VARMA, RR
MONTGOMERY, V
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1418 - 1421