THE ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF TUNNEL METAL-OXIDE-SEMICONDUCTOR DEVICES BUILT ON N-INP SUBSTRATES

被引：31

作者：

PANDE, KP ^{[1
]}

SHEN, CC ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT ELECT ENGN,PISCATAWAY,NJ 08854

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.329941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：749 / 753

页数：5

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