DEGRADATION MECHANISM FOR OHMIC CONTACTS IN GAAS DEVICES

被引：9

作者：

CHINO, K ^{[1
]}

WADA, Y ^{[1
]}

机构：

[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 10期

关键词：

D O I：

10.1143/JJAP.16.1823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1823 / 1828

页数：6

相关论文

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