FIELD-EMISSION FROM SILICON THROUGH STABLE CONTAMINANT LAYERS

被引：6

作者：

LIU, J ^{[1
]}

HREN, JJ ^{[1
]}

SON, UT ^{[1
]}

JONES, GW ^{[1
]}

SUNE, CT ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA, RES TRIANGLE PK, NC 27709 USA

来源：

APPLIED SURFACE SCIENCE | 1993年 / 67卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(93)90293-K

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon field emitter arrays have been studied by field emission current-voltage measurements as well as by direct FEM and FIM imaging. A typical stable current of 1 muA per emitter was measured at extraction voltages of about 150 V. The data yielded a linear Fowler-Nordheim plot; however, an irreversible and abrupt change of slope was observed in the early stage of field emission upon the first increase in field. Subsequently stable and reversible, but displaced, F-N plots were obtained. We postulate that this phenomenon is due to a self-regulating process that forms a thin stable contaminant on the emitting surface. This hypothesis was tested under controlled conditions using single emitters and found to be self-consistent.

引用

页码：48 / 55

页数：8

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