PHYSICAL-PROPERTIES OF SIO2 AND ITS INTERFACE TO SILICON IN MICROELECTRONIC APPLICATIONS

被引：3

作者：

WEBER, W ^{[1
]}

BROX, M ^{[1
]}

机构：

[1] IBM CORP,IBM SIEMENS DRAM DEV PROJECT,ESSEX JCT,VT

来源：

MRS BULLETIN | 1993年 / 18卷 / 12期

关键词：

D O I：

10.1557/S0883769400039063

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：36 / 42

页数：7

共 17 条

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MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) :273-276

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[9] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

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KO, PK ;

CHAN, TY ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2268-2278

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