DEEP LEVELS IN GALLIUM-ARSENIDE BY CAPACITANCE METHODS

被引：55

作者：

SAKAI, K ^{[1
]}

IKOMA, T ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,7-22-1 ROPPONGI,MINATO,TOKYO,JAPAN

来源：

APPLIED PHYSICS | 1974年 / 5卷 / 02期

关键词：

D O I：

10.1007/BF00928230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：165 / 171

页数：7

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