EPITAXY OF SI-GE HETEROSTRUCTURES BY SI MBE

被引：5

作者：

BARIBEAU, JM

HOUGHTON, DC

LOCKWOOD, DJ

DHARMAWARDANA, MWC

AERS, GC

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(89)90439-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：447 / 450

页数：4

共 8 条

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[3] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES
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OURMAZD, A
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[4] RAMAN-SCATTERING IN FIBONACCI SUPERLATTICES
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[5] FOLDED ACOUSTIC PHONONS IN SI/GEXSI1-X STRAINED-LAYER SUPERLATTICES
LOCKWOOD, DJ
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[6] SUBSTRATE AND CAPPING LAYER EFFECTS ON THE PHONON-SPECTRUM OF ULTRATHIN SUPERLATTICES
LOCKWOOD, DJ
DHARMAWARDANA, MWC
AERS, GC
BARIBEAU, JM
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (24) : 2040 - 2042
[7] STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES
PEARSALL, TP
BEVK, J
FELDMAN, LC
BONAR, JM
MANNAERTS, JP
OURMAZD, A
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (07) : 729 - 732
[8] DETECTION AND CHARACTERIZATION OF INDIVIDUAL GE LAYERS IN SI(100) USING RAMAN-SPECTROSCOPY
TSANG, JC
IYER, SS
DELAGE, SL
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1732 - 1734