SILICON WAFER PROCESSING BY APPLICATION OF SPUN-ON DOPED AND UNDOPED SILICA LAYERS

被引：14

作者：

BECKER, JA ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST THEORET ELEKTROTECH,TEMPLERGRABEN 55,51 AACHEN,WEST GERMANY

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 01期

关键词：

D O I：

10.1016/0038-1101(74)90116-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：87 / 94

页数：8

相关论文

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