DETERMINATION OF DOPING AND MOBILITY PROFILES BY AUTOMATIC ELECTRICAL MEASUREMENTS AND ANODIC-STRIPPING

被引：6

作者：

BOURO, L

TSOUKALAS, D

机构：

[1] CNRS, Grenoble, Fr, CNRS, Grenoble, Fr

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1987年 / 20卷 / 05期

关键词：

D O I：

10.1088/0022-3735/20/5/013

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

INTEGRATED CIRCUITS

引用

页码：541 / 544

页数：4

共 10 条

[1]

ANTONIADIS D, 1978, 50192 STANF U TECHN

[2]

FARGEIX A, 1981, DEA REPORT

[3] AUTOMATED-SYSTEM FOR CONTROLLED STRIPPING OF THIN SILICON LAYERS [J].

GALLONI, R ;

GAVINA, G ;

LOTTI, R ;

PIOMBINI, A .

REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (02) :81-84

[4]

GROVE AS, 1971, PHYSICS TECHNOLOGY S

[5]

Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[6]

PAWLIK M, 1982, GEC J TECHNOL, V2, P48

[7]

Putley E. H., 1969, HALL EFFECT SEMICOND

[8]

TSOUKALAS D, 1983, THESIS INP GRENOBLE

[9]

TSOUKALAS D, 1983, MICRO B, V10, P129

YOUNG, ND ;

HIGHT, MJ .