AUTOMATED HALL-EFFECT PROFILER FOR ELECTRICAL CHARACTERIZATION OF SEMICONDUCTORS

被引:6
作者
YOUNG, ND
HIGHT, MJ
机构
关键词
D O I
10.1049/el:19850741
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1044 / 1046
页数:3
相关论文
共 7 条
[1]  
BARON R, 1969, J APPL PHYS, V40, P40
[2]   ELECTRICAL CHARACTERIZATION OF SEMICONDUCTORS [J].
BLOOD, P ;
ORTON, JW .
REPORTS ON PROGRESS IN PHYSICS, 1978, 41 (02) :157-257
[3]   SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].
CHANDRA, A ;
WOOD, CEC ;
WOODARD, DW ;
EASTMAN, LF .
SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650
[4]   ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].
KENNEDY, DP ;
OBRIEN, RR .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (02) :212-&
[5]  
MANARA A, 1971, THIN SOLID FILMS, V8, P59
[6]   DOPANT PROFILING IN SILICON ON SAPPHIRE USING SPREADING RESISTANCE [J].
PAWLIK, M ;
GROVES, RD .
APPLIED PHYSICS LETTERS, 1984, 44 (05) :542-544
[7]   DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].
TANNENBAUM, E .
SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132