ELECTRICAL CHARACTERIZATION OF P-TYPE ZNSE-N AND ZN1-XMGXSYSE1-Y-N THIN-FILMS

被引：17

作者：

MENSZ, PM

HERKO, S

HABERERN, KW

GAINES, J

PONZONI, C

机构：

[1] Philips Laboratories, Briarcliff Manor

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 20期

关键词：

D O I：

10.1063/1.110339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Differential van der Pauw-Hall effect and resistivity measurements have been performed to determine the concentration and mobility of free holes in nitrogen doped ZnSe and Zn1-xMgxSySe1-y thin films. Hall data taken between 120 and 300 K, with magnetic fields up to 4 kG yielded an activation energy of the nitrogen accepters in ZnSe:N of 104 meV. Donor compensation in the ZnSe:N samples was negligible. Compared with ZnSe:N, samples of Zn1-xMgxSySe1-y:N, exhibited a significantly lower value of room-temperature mobility of holes, and fast-carrier freeze-out at relatively high temperature, approximately T = 200 K.

引用

页码：2800 / 2802

页数：3

共 12 条

[1] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].