INTERACTION BETWEEN ARSENIC AND ALUMINUM IN GERMANIUM

被引:5
作者
MCCALDIN, JO
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10.1063/1.1735425
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O59 [应用物理学];
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页码:89 / 94
页数:6
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[1]   EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J].
BACKENSTOSS, G .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :699-710
[2]  
FULLER CS, 1959, SEMICONDUCTORS, pCH5
[3]   SEMICONDUCTOR PROPERTIES OF RECRYSTALLIZED SILICON IN ALUMINUM ALLOY JUNCTION DIODES [J].
GUDMUNDSEN, RA ;
MASERJIAN, J .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) :1308-1316
[4]   DIFFUSION OF GALLIUM IN SILICON [J].
KURTZ, AD ;
GRAVEL, CL .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) :1456-1459
[5]   DIFFUSION OF ANTIMONY OUT OF GERMANIUM AND SOME PROPERTIES OF THE ANTIMONY-GERMANIUM SYSTEM [J].
MILLER, RC ;
SMITS, FM .
PHYSICAL REVIEW, 1957, 107 (01) :65-70
[6]   CONDUCTIVITY AND HALL EFFECT IN THE INTRINSIC RANGE OF GERMANIUM [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 94 (06) :1525-1529
[7]  
REISS, 1956, BELL SYSTEM TECH J, V35, P535
[8]   FORMATION OF JUNCTION STRUCTURES BY SOLID-STATE DIFFUSION [J].
SMITS, FM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1049-1061
[9]  
THURMOND, 1956, J CHEM PHYS, V25, P799
[10]   RESISTIVITIES AND HOLE MOBILITIES IN VERY HEAVILY DOPED GERMANIUM [J].
TRUMBORE, FA ;
TARTAGLIA, AA .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) :1511-1511