ANALYSIS OF A TUNNEL DIODE

被引：3

作者：

SHIBATA, A

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.17.770

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：770 / &

共 21 条

[1] TUNNELING CURRENT IN ESAKI DIODES
BATES, CW
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1070 - &
[2] BLICHER A, 1961, P IRE, V49, P1428
[3] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS
CHYNOWETH, A
LOGAN, RA
FELDMANN, WL
[J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &
[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS
ESAKI, L
[J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604
[5] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS
ESAKI, L
MIYAHARA, Y
[J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 13 - &
[6] FRANZ W, 1955, TAGUNGSREFERATE, V3, P1
[7] FUKUI H, PRIVATE COMMUNICATIO
[8] FUKUI H, 1961, J I ELEC ENG JAPAN, V81, P940
[9] EVIDENCE FOR STATES (BANDS) IN FORBIDDEN GAP OF DEGENERATE GAAS AND INP - SECONDARY TUNNEL CURRENTS AND NEGATIVE RESISTANCES
HOLONYAK, N
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 130 - &
[10] THEORY OF TUNNELING
KANE, EO
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 83 - +